LDMOS

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Template:Short description LDMOS (laterally-diffused metal-oxide semiconductor)[1] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles.[1] As an example, the drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.

The silicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks,[2][3][4] enabling the majority of the world's cellular voice and data traffic.[5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to source breakdown voltage usually above 60 volts.[6] Compared to other devices such as GaAs FETs they show a lower maximum power gain frequency.

Manufacturers of LDMOS devices and foundries offering LDMOS technologies include, Tower Semiconductor, TSMC, LFoundry, SAMSUNG, GLOBALFOUNDRIES, Vanguard International Semiconductor Corporation, STMicroelectronics, Infineon Technologies, RFMD, NXP Semiconductors (including former Freescale Semiconductor), SMIC, MK Semiconductors, Polyfet and Ampleon.

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Applications

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Common applications of LDMOS technology include the following.

RF LDMOS

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Common applications of RF LDMOS technology include the following.

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See also

References

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  1. ^ a b A. Elhami Khorasani, IEEE Electron Dev. Lett., vol. 35, pp. 1079-1081, 2014
  2. ^ a b c d e Page Module:Citation/CS1/styles.css has no content.Baliga, Bantval Jayant (2005). Silicon RF Power MOSFETS. World Scientific. pp. 1–2. ISBN 9789812561213.
  3. ^ a b c d e f g h Page Module:Citation/CS1/styles.css has no content.Asif, Saad (2018). 5G Mobile Communications: Concepts and Technologies. CRC Press. p. 134. ISBN 9780429881343.
  4. ^ a b c d e f g h i j k l Page Module:Citation/CS1/styles.css has no content.Theeuwen, S. J. C. H.; Qureshi, J. H. (June 2012). "LDMOS Technology for RF Power Amplifiers" (PDF). IEEE Transactions on Microwave Theory and Techniques. 60 (6): 1755–1763. Bibcode:2012ITMTT..60.1755T. doi:10.1109/TMTT.2012.2193141. ISSN 1557-9670. S2CID 7695809.
  5. ^ a b c d e f g h i j k Page Module:Citation/CS1/styles.css has no content."LDMOS Products and Solutions". NXP Semiconductors. Retrieved 4 December 2019.
  6. ^ Page Module:Citation/CS1/styles.css has no content.van Rijs, F. (2008). "Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications". Radio and Wireless Symposium, 2008 IEEE. Orlando, FL. pp. 69–72. doi:10.1109/RWS.2008.4463430.
  7. ^ a b Page Module:Citation/CS1/styles.css has no content.Duncan, Ben (1996). High Performance Audio Power Amplifiers. Elsevier. pp. 177-8, 406. ISBN 9780080508047.
  8. ^ Page Module:Citation/CS1/styles.css has no content."A 600W broadband HF amplifier using affordable LDMOS devices". QRPblog. 2019-10-27. Retrieved 2022-09-28.
  9. ^ a b c Page Module:Citation/CS1/styles.css has no content."L-Band Radar". NXP Semiconductors. Retrieved 9 December 2019.
  10. ^ a b c d Page Module:Citation/CS1/styles.css has no content."Avionics". NXP Semiconductors. Retrieved 9 December 2019.
  11. ^ a b c Page Module:Citation/CS1/styles.css has no content."RF Aerospace and Defense". NXP Semiconductors. Retrieved 7 December 2019.
  12. ^ a b Page Module:Citation/CS1/styles.css has no content."Communications and Electronic Warfare". NXP Semiconductors. Retrieved 9 December 2019.
  13. ^ a b c d e f g h Page Module:Citation/CS1/styles.css has no content."Mobile & Wideband Comms". ST Microelectronics. Retrieved 4 December 2019.
  14. ^ a b c d e f Page Module:Citation/CS1/styles.css has no content."470–860 MHz – UHF Broadcast". NXP Semiconductors. Retrieved 12 December 2019.
  15. ^ a b c d e f Page Module:Citation/CS1/styles.css has no content."RF LDMOS Transistors". ST Microelectronics. Retrieved 2 December 2019.
  16. ^ a b Page Module:Citation/CS1/styles.css has no content."28/32V LDMOS: IDDE technology boost efficiency & robustness" (PDF). ST Microelectronics. Retrieved 23 December 2019.
  17. ^ a b c d e f Page Module:Citation/CS1/styles.css has no content."AN2048: Application note – PD54008L-E: 8 W – 7 V LDMOS in PowerFLAT packages for wireless meter reading applications" (PDF). ST Microelectronics. Retrieved 23 December 2019.
  18. ^ a b c d e f g h i j k Page Module:Citation/CS1/styles.css has no content."ISM & Broadcast". ST Microelectronics. Retrieved 3 December 2019.
  19. ^ a b c d Page Module:Citation/CS1/styles.css has no content."700–1300 MHz – ISM". NXP Semiconductors. Retrieved 12 December 2019.
  20. ^ a b Page Module:Citation/CS1/styles.css has no content."2450 MHz – ISM". NXP Semiconductors. Retrieved 12 December 2019.
  21. ^ a b c d e f g h Page Module:Citation/CS1/styles.css has no content."1–600 MHz – Broadcast and ISM". NXP Semiconductors. Retrieved 12 December 2019.
  22. ^ a b Page Module:Citation/CS1/styles.css has no content."28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz" (PDF). ST Microelectronics. Retrieved 23 December 2019.
  23. ^ a b Page Module:Citation/CS1/styles.css has no content."S-Band Radar". NXP Semiconductors. Retrieved 9 December 2019.
  24. ^ Page Module:Citation/CS1/styles.css has no content."RF Cellular Infrastructure". NXP Semiconductors. Retrieved 7 December 2019.
  25. ^ a b c d Page Module:Citation/CS1/styles.css has no content."RF Mobile Radio". NXP Semiconductors. Retrieved 9 December 2019.
  26. ^ Page Module:Citation/CS1/styles.css has no content."UM0890: User manual – 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors" (PDF). ST Microelectronics. Retrieved 23 December 2019.
  27. ^ a b Page Module:Citation/CS1/styles.css has no content."915 MHz RF Cooking". NXP Semiconductors. Retrieved 7 December 2019.
  28. ^ a b c Page Module:Citation/CS1/styles.css has no content.Torres, Victor (21 June 2018). "Why LDMOS is the best technology for RF energy". Microwave Engineering Europe. Ampleon. Archived from the original on 10 December 2019. Retrieved 10 December 2019.
  29. ^ a b c Page Module:Citation/CS1/styles.css has no content."RF Defrosting". NXP Semiconductors. Retrieved 12 December 2019.
  30. ^ Page Module:Citation/CS1/styles.css has no content."White Paper – 50V RF LDMOS: An ideal RF power technology for ISM, broadcast and commercial aerospace applications" (PDF). NXP Semiconductors. Freescale Semiconductor. September 2011. Retrieved 4 December 2019.
  31. ^ a b Page Module:Citation/CS1/styles.css has no content."RF Cellular Infrastructure". NXP Semiconductors. Retrieved 12 December 2019.
  32. ^ Page Module:Citation/CS1/styles.css has no content."450–1000 MHz". NXP Semiconductors. Retrieved 12 December 2019.
  33. ^ Page Module:Citation/CS1/styles.css has no content."3400–4100 MHz". NXP Semiconductors. Retrieved 12 December 2019.
  34. ^ Page Module:Citation/CS1/styles.css has no content."HF, VHF and UHF Radar". NXP Semiconductors. Retrieved 7 December 2019.

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